Computer simulation model of the effects of interface states on high‐performance amorphous silicon solar cells
作者:
H. Tasaki,
W. Y. Kim,
M. Hallerdt,
M. Konagai,
K. Takahashi,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 2
页码: 550-560
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340085
出版商: AIP
数据来源: AIP
摘要:
A computer simulation model of amorphous silicon solar cells using a Scharfetter and Gummel solution of Poisson’s equation and Taylor and Simmons occupancy statistics for the dangling bond gap states (Dstates), has been developed. With a suitable choice of parameters, the numerical results for solar cell collection efficiency and dark and illuminatedI‐Vcharacteristics agree well with experimental values. The model has been used specifically to study the influence of interface states at the TCO‐p(transparent conductive oxide),p‐i,i‐n, andn‐metal interfaces and to explain the beneficial role of a graded‐band‐gap layer at thep‐iinterface.
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