Fabrication of column‐based silicon field emitter arrays for enhanced performance and yield
作者:
D. Temple,
C. A. Ball,
W. D. Palmer,
L. N. Yadon,
D. Vellenga,
J. Mancusi,
G. E. McGuire,
H. F. Gray,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 1
页码: 150-157
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.587973
出版商: American Vacuum Society
关键词: SILICON;FIELD EMISSION;SEMICONDUCTOR DEVICES;FABRICATION;COMPUTERIZED SIMULATION;ETCHING;GEOMETRY;Si
数据来源: AIP
摘要:
In this article, simulation, fabrication, and direct current (dc) characterization data are presented for column‐based silicon field emitter array (FEA) devices, made using anisotropic or isotropic etching of silicon to form emitter tips. In the design of the fabrication process, we have attempted to minimize spatial nonuniformity of process parameters affecting the geometry of the device structure, and, where possible, counteract the nonuniformity through a proper choice of processing variables. FEA devices, with as many as 232 630 tips, on 4–10 μm centers, have been successfully fabricated. The highest electron emission current measured was over 18 mA at the gate voltage of 150 V for a 6648 tip array.
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