High gain-bandwidth-product silicon heterointerface photodetector
作者:
Aaron R. Hawkins,
Weishu Wu,
Patrick Abraham,
Klaus Streubel,
John E. Bowers,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 3
页码: 303-305
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118399
出版商: AIP
数据来源: AIP
摘要:
We report the fabrication of a near-infrared avalanche photodetector with a gain-bandwidth product of over 300 GHz. The detector uses a Si multiplication layer and an InGaAs absorption layer. A 3 dB bandwidth of over 9 GHz was measured for current gains as high as 35. Photocurrent measurements using 1.3&mgr;m light indicate a quantum efficiency for the detector of 0.60, near the limit expected based on the absorber thickness. ©1997 American Institute of Physics.
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