Bulk SiGe wafers cut from single‐crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro‐ and macroheterogeneity for use as primary standards for future characterization of SiGe thin films on Si that are needed by the microelectronics industry as reference standards. Specimens with nominal compositions of 14 at. &percent;, 6.5 at. &percent;, and 3.5 at. &percent; Ge were rigorously tested with wavelength dispersive spectrometers (WDS) using multiple point, multiple sample, and duplicate data acquisitions. The SiGe14 is a good bulk reference material for evaluation of SiGe thin films. © 2003 American Institute of Physics