Low‐temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle
作者:
Koji Egami,
Atsushi Ogura,
Masakazu Kimura,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 1
页码: 289-291
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336831
出版商: AIP
数据来源: AIP
摘要:
〈100〉 textured polycrystalline silicon films deposited by low pressure chemical vapor deposition at 700 °C on SiO2/Si substrates have been amorphized by implantation with 100 keV28Si+ion at a dose of 2×1015/cm2and thermally annealed at 550 °C for 168 h. In a 0.15‐&mgr;m‐thick film, the larger grain growth (1.5 &mgr;m) occurred, and the 〈100〉 oriented grains were found. This fact implies a possibility of the 〈100〉 oriented and large silicon grains formation by seed selection through ion channeling technique even if the 〈100〉 textured polycrystalline silicon film with relatively small channeling yields is utilized.
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