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GaAs/AlGaAs distributed feedback‐transverse junction stripe laser using a hybrid liquid phase epitaxy/metal‐organic chemical vapor deposition growth technique

 

作者: H. Kawanishi,   M. J. Hafich,   R. A. Skogman,   B. S. Lenz,   P. E. Petersen,  

 

期刊: Journal of Applied Physics  （AIP Available online 1981）
卷期: Volume 52, issue 7  

页码: 4447-4449

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.329359

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Room‐temperature operation was obtained in a new transverse junction stripe laser with distributed feedback. The wafers were grown by a liquid phase epitaxy/metal‐organic chemical vapor deposition (LPE/MO‐CVD) hybrid technique. These lasers operated stably in a single longitudinal mode at room temperature under pulsed operation. The temperature dependence of lasing wavelength wasd&lgr;/dT= 0.63 A˚/°C.

 

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