AbstractThe electrical conductivity and the Hall effect for TlGaTe2crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p‐type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checke