Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment
作者:
Scott T. Dunham,
James D. Plummer,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 7
页码: 2551-2561
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337004
出版商: AIP
数据来源: AIP
摘要:
In the companion paper [J. Appl. Phys.59, 2541 (1986)], we developed a model based on a continuity equation approach for the supersaturation of interstitials during oxidation in dry O2. The analysis resulted in an expression having the experimentally observed sublinear dependence of oxidation rate without requiring any assumptions of nonlinearity. Through observations of the dependence of the linear rate constant at the linear‐parabolic model of oxidation on ambient oxygen pressure, predictions were made of how the interstitial supersaturation will vary with oxidation rate at a given temperature. In this paper, those predictions are compared to data for the enhanced diffusion of phosphorus in 〈100〉 silicon during oxidation at 900 and 1000 °C in both 100% O2and O2‐Ar mixtures as well as existing data for oxidation enchanced diffusion and stacking fault growth.
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