首页   按字顺浏览 期刊浏览 卷期浏览 Summary Abstract: Ordering in GaAs0.5Sb0.5grown by molecular‐beam epitaxy
Summary Abstract: Ordering in GaAs0.5Sb0.5grown by molecular‐beam epitaxy

 

作者: Y. E. Ihm,   N. Otsuka,   Y. Hirotsu,   J. Klem,   H. Morkoç,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1988)
卷期: Volume 6, issue 2  

页码: 743-744

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584363

 

出版商: American Vacuum Society

 

关键词: Ga(As,Sb)

 

数据来源: AIP

 

 

点击下载:  PDF (213KB)



返 回