Transverse 1/fnoise in InSb thin films and the signal‐to‐noise ratio of related Hall elements
作者:
Nobuo Kotera,
Junji Shigeta,
Tetsu Oi,
Muneyasu Nakashima,
Kikuji Sato,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 12
页码: 5990-5996
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.324567
出版商: AIP
数据来源: AIP
摘要:
Transverse 1/fnoise in approximately 2‐&mgr;m‐thick InSb thin films is investigated experimentally at room temperature. Linear dependence of noise voltage on dc bias current is shown quantitatively. The noise intensity is inversely proportional to the number of conduction electrons in the bulk. The temperature rise of specimens due to Joule heating does not affect the noise intensity coefficient. The coefficient differs from sample to sample, which is reduced by the heat treatment of specimens, but is independent of the doped impurity concentration. As a result, the signal‐to‐noise ratio of related Hall elements is formulated for the first time for audio magnetic heads applications. The signal‐to‐noise ratio is nearly 80 dB for a 10‐G magnetic field in the audio frequency range.
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