Electromigration threshold in damascene versus plasma-etched interconnects
作者:
Joris Proost,
Karen Maex,
Luc Delaey,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2748-2750
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122578
出版商: AIP
数据来源: AIP
摘要:
Electromigration threshold has been measured for unpassivated damascene Al(Cu) interconnects by drift experiments on Blech-type test structures, and results are compared to equivalent plasma-etched lines. When using a damascene implementation, the critical product of current density and stripe length increases significantly. As a result, the incubation period, needed for Cu depletion beyond a critical length, is increased over a wide temperature range (155–230 °C). This is shown to be an intrinsic effect, directly controlling the relative electromigration performance of both metallization schemes. ©1998 American Institute of Physics.
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