Interdiffusion of GaAs/Ga1−xInxAs quantum wells
作者:
W. J. Taylor,
N. Kuwata,
I. Yoshida,
T. Katsuyama,
H. Hayashi,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 12
页码: 8653-8655
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353376
出版商: AIP
数据来源: AIP
摘要:
We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12–100 A˚, grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830–950 °C, and shifts in the electron‐to‐heavy‐hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1×10−16–2×10−14cm2/s and activation energies of 3.1–3.8 eV were obtained.
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