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Thermal‐wave measurements and monitoring of TaSixsilicide film properties

 

作者: W. Lee Smith,   Jon Opsal,   Allan Rosencwaig,   James B. Stimmell,   Jane C. Allison,   Aloke S. Bhandia,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 710-713

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582866

 

出版商: American Vacuum Society

 

关键词: DENSITY;ELECTRIC CONDUCTIVITY;TANTALUM SILICIDES;THIN FILMS;THICKNESS;DEPOSITION;NONDESTRUCTIVE TESTING;METALLIZATION;INTEGRATED CIRCUITS;MICROELECTRONICS;MEASURING METHODS;HEAT TREATMENTS;WAVE PROPAGATION;SURFACE ANALYSIS;TaSi2

 

数据来源: AIP

 

摘要:

There presently exists the need to measure the postanneal thickness of silicide films deposited on Si. In addition, there exists the need to monitor the deposition parameters of silicide films, since variations in the deposition process may alter the film stoichiometry, density, and preanneal electrical resistivity. In this paper we describe results of efforts to satisfy these needs using a thermal‐wave Therma‐Probe 100.

 

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