Insitulaser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth
作者:
A. Leycuras,
M. G. Lee,
A. Hausmann,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 9
页码: 5680-5685
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359625
出版商: AIP
数据来源: AIP
摘要:
The morphology of Ge layers, a few micrometers thick, grown by chemical‐vapor deposition on GaAs substrates, is very sensitive to the growth conditions. The evolution of the intensity of the dynamicinsitureflectometry reveals different growth features. We present here an analysis of the basic elements from which it is possible to deduce important physical parameters of the Ge layers: the shape of the growth defects, their density, the optical index of the homogeneous layer, and the effective index of the rough layer. The respective contributions of the scattered and refracted intensities to the measured intensity are described semiempirically. Typical experimental curves and their corresponding time‐dependent growth rate, optical index, and morphology are given. ©1995 American Institute of Physics.
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