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Energy gap in Si and Ge: Impurity dependence

 

作者: G. D. Mahan,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 5  

页码: 2634-2646

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327994

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The energy gap in silicon and germanium is calculated as a function of the concentration of donor impurities. The results are compared with the available data from optical experiments and devices. Previous theories are critically reviewed.

 

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