Chemical vapor deposition of diamond growth using a chemical precursor
作者:
Eric Leroy,
Olivier M. Ku¨ttel,
Louis Schlapbach,
Luc Giraud,
Titus Jenny,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1050-1052
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122081
出版商: AIP
数据来源: AIP
摘要:
A nucleation method to form diamond on chemically pretreated silicon (111) surfaces is reported. The nucleation consisted of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Subsequently, low pressure diamond growth was performed via microwave plasma chemical vapor deposition in a tubular deposition system. The resulting diamond layers presented a good crystallinity and the Raman spectra showed a very sharp peak at1331 cm−1.©1998 American Institute of Physics.
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