Surface energy model for the thickness dependence of the lateral oxidation of AlAs
作者:
R. L. Naone,
L. A. Coldren,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2277-2280
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366034
出版商: AIP
数据来源: AIP
摘要:
The lateral oxidation rate of AlAs layers decreases dramatically for layers thinner than about 500 Å, because the activation energies for the rate constant of the reaction at the oxidation front increases by an amount inversely proportional to the layer thickness. We derive a model for the thickness dependence of the lateral oxidation rate of AlAs based on the surface energy of the curvature observed at the oxide tip. From the model, we show that the linear oxidation rate has anexp(−&thgr;0/&thgr;)dependence on the AlAs layer thickness&thgr;, and we can predict the slowing of oxidation when the AlAs layer is cladded with AlGaAs barriers. Also, we estimate the surface energy of the AlAs/oxide interface to be 50 eV/nm2. ©1997 American Institute of Physics.
点击下载:
PDF
(459KB)
返 回