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Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

 

作者: K. Wakao,   H. Nishi,   T. Kusunoki,   S. Isozumi,   S. Ohsaka,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 11  

页码: 1035-1037

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94628

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InGaAsP/InGaP lasers emitting at 724–727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2by thinning the active layer. Room‐temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

 

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