Detection of residual defects in silicon doped by neutron transmutation
作者:
Joachim Hartung,
Jo¨rg Weber,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 1
页码: 118-121
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359376
出版商: AIP
数据来源: AIP
摘要:
Proton implantation into neutron transmutation doped (NTD) silicon generates three hydrogen‐related effective mass‐like donors with binding energies between 35 and 44 meV. The donors are formed by the complexing of hydrogen with damage induced by the irradiation. Our results indicate residual defects even in well annealed NTD silicon. ©1995 American Institute of Physics.
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