Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50‐&mgr;m‐thick epitaxially grownn‐type silicon with 3.9 MeV H+beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High‐resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.