Chalcogenide amorphous threshold switching devices have been pulse switched and studied in the on‐regime by applying cw functions. A 1‐MHz square, sine, or triangular test wave of maximum amplitude ±7 V applied to a device which is then pulse switched (65, 30, or 10 V threshold), will cause the device to remain in the on‐regime after the set pulse turns off. Lowering the cw frequency or lowering the wave amplitude beneath critical values causes the specimen to turn off. At frequencies significantly above the turn‐off value, the positive and negative high‐current segments of theV‐Ion‐regime curve are connected by a very high‐resistance essentially linear region passing through zero. The on‐regime can be preserved in this manner at ambient temperatures varying from at least −196 to + 150 °C; however, increasing ambient temperature causes a decrease in the turn‐off frequency. Decreasing the wave amplitude causes an increase in the turn‐off frequency.