We demonstrate for the first time low‐loss optical guiding in In‐doped GaAs. Ridge waveguides are made with single In0.012Ga0.988As ternary layers and In0.2Ga0.8As‐GaAs superlattices. Attenuation constants of ∼1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation ≤0.5 dB/cm.