Scattering of charge carriers in silicon surface layers
作者:
Y. C. Cheng,
E. A. Sullivan,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 2
页码: 923-925
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1662292
出版商: AIP
数据来源: AIP
摘要:
The mobility of free carriers in a surface layer of a silicon metal‐oxide‐semiconductor transistor has been computed theoretically. It represents the first realistic approach which attempts to combine Coulomb, phonon, and surface‐roughness scattering to account for the mobility behavior over different temperatures and applied fields. An over‐all semiquantitative agreement between theory and experiment is obtained for both the channel mobility and magnetoresistance effect.
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