Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy
作者:
Q. Chen,
J. S. Osinski,
P. D. Dapkus,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 14
页码: 1437-1439
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103363
出版商: AIP
数据来源: AIP
摘要:
Laser‐assisted atomic layer epitaxy (LALE) is used to locally deposit device‐quality material for the first time, as demonstrated by successfully fabricating broad‐area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition epitaxy, heterostructures are grown which allow characterization of material quality by photoluminescence and capacitance‐voltage measurements. In addition, graded‐index separate‐confinement heterostructure lasers with threshold current densities of 650 A/cm2for 580‐&mgr;m‐long devices were made using the LALE quantum well deposit, while devices made away from the deposit did not lase.
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