Incorporation kinetics of rare‐earth elements in Si during molecular beam epitaxy
作者:
K. Miyashita,
Y. Shiraki,
D. C. Houghton,
S. Fukatsu,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 2
页码: 235-237
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114678
出版商: AIP
数据来源: AIP
摘要:
Incorporation kinetics of rare‐earth elements (Er,Pr) in Si during solid source molecular beam epitaxy (MBE) is studied using secondary ion mass spectrometry. Pronounced surface segregation is consistently observed both for Er and Pr in normal MBE growth and their segregation tendencies are even stronger than those of typical dopants. Segregant‐assisted growth (SAG) using Sb was successful in significantly reducing the surface segregation of rare‐earth atoms, thereby opening the possibility of establishing layered structures in normal MBE. ©1995 American Institute of Physics.
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