Orientation and velocity dependence of solute trapping in Si
作者:
P. Baeri,
G. Foti,
J. M. Poate,
S. U. Campisano,
A. G. Cullis,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 10
页码: 800-802
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92136
出版商: AIP
数据来源: AIP
摘要:
Interface segregation coefficients have been measured for Bi in Si for melt growth as a function of velocity for (111) and (100) crystals. Surface layers were melted by ruby laser irradiation and liquid‐solid interface velocities varied from 0.8 to 5 m/s by changing Si substrate temperatures or laser pulse length. Segregation coefficients are strongly dependent on velocity and orientation in this range.
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