Transmission electron microscopy and high resolution electron microscopy studies of shallow (Rp∼20 nm) As and B implanted and electron beam annealed silicon
作者:
G. B. McMillan,
David J. Smith,
J. P. Gowers,
H. Ahmed,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 11
页码: 1081-1083
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94651
出版商: AIP
数据来源: AIP
摘要:
Shallow (Rp∼20 nm) As and B‐doped layers in (100) silicon, formed by low‐energy ion implantation, have been investigated using conventional and high resolution transmission electron microscopy before and after either electron beam or furnace annealing. After annealing residual defects were observed in the region beyond the original amorphous/crystalline interface for both As and B implants and the nature of these defects and their stability was found to be relatively insensitive to a variety of annealing conditions. Lattice images of 10‐keV As‐implanted material indicated that a continuous amorphous layer was formed after implantation which regrew into perfect single crystal following electron beam processing for 1 s with a peak temperature of 900 °C.
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