Trapping effects in thin oxynitride layers in metal‐insulator‐semiconductor devices
作者:
A. Faigon,
J. Shappir,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 12
页码: 4633-4637
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.336233
出版商: AIP
数据来源: AIP
摘要:
The trapping characteristics of thin oxynitride films obtained by the oxidation of a thermally nitrided silicon surface were studied under both tunneling and hot electron injection. Comparison with standard oxide layers yields the following differences: No net positive charge generation is observed in the investigated layers, and the rate of surface states generation is about one order of magnitude smaller. The electron trap density is estimated to be ∼6×1017cm−3with a capture cross section of ∼10−17cm2.
点击下载:
PDF
(290KB)
返 回