The kinetics of a low‐temperature silicide formation have been investigated in experiments on the solid‐phase interaction between Cr and amorphous Si (a‐Si). For the Cr/plasma‐enhanced chemical‐vapor‐depositeda‐Si:H system, it was found that amorphous interlayer was formed at the interface at RT. The compositional ratio of Cr to Si in the amorphous interlayer formed at RT was found to be about 5%. On the other hand, for the Cr/sputtereda‐Si system at RT, an interfacial amorphous layer with negligible thickness seemed to exist. From the experimental results and from the results previously reported, the kinetics of the low‐temperature interaction were discussed and a new model of an internal‐field‐assisted interaction was proposed. ©1995 American Institute of Physics.