RIE-induced damage and contamination in silicon
作者:
YoungH. Lee,
G.S. Oehrlein,
C. Ransom,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1989)
卷期:
Volume 111-112,
issue 1-2
页码: 221-232
ISSN:1042-0150
年代: 1989
DOI:10.1080/10420158908212997
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Reactive ion etching always causes adynamicradiation effect to crystalline silicon, beacause of an energetic particle bombardment. RIE induced radiation effects are mostly confined to the near surface within a projected range of impinging ions, but point defects, which are highly mobile at room temperatures, can migrate further into the bulk before a damaged surface layer is etched away. Competition between etch rates and damage rates ultimately determines a degree of the RIE damage residue: the slower the etch rate, the heavier the damage may be accumulated at the near surface, eventually leading to amorphization of the surface region. Also, a removal of the surface layer due to etching or sputtering enhances a chemical reaction between a bare surface and incoming radicals. This easily forms a foreign material on the surface which gives rise to a serious contamination problem. A post-cleaning at a low temperature is highly desirable whenever the surface of active devices must be exposed to reactive plasmas.
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