LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS
作者:
J. F. Butler,
T. C. Harman,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 12,
issue 10
页码: 347-349
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1651847
出版商: AIP
数据来源: AIP
摘要:
Diode lasers with emission wavelengths as long as 28 &mgr; have been fabricated using Pb1−xSnxTe withxup to 0.27. Properties of laser diodes at 77°K and 12°K have been measured for a number of compositions in the range 0.15 ≤x≤ 0.27. The vapor growth and annealing‐diffusion steps were performed in a special quartz ampoule which remained sealed throughout the process. Threshold current densities were dependent on diode surface conditions and could be reduced by at least 50% by etching.
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