Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
作者:
G. E. Cirlin,
G. M. Guryanov,
A. O. Golubok,
S. Ya. Tipissev,
N. N. Ledentsov,
P. S. Kop’ev,
M. Grundmann,
D. Bimberg,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 1
页码: 97-99
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115520
出版商: AIP
数据来源: AIP
摘要:
Initial stage of InAs pseudomorphic layer transformation (1–3 ML) on GaAs (100) singular surface may result for sequential submonolayer molecular beam epitaxy in formation of a pseudoperiodic array of InAs ‘‘wires’’ along the [001] direction. Complex parquet structures having similar anisotropy are formed on misoriented surface (3° towards [0–11] direction). Increase in growth interruption time after each growth cycle for 2 ML InAs deposited on singular surface results in decomposition of the wires into dots arranged in a 2D square lattice. Intentional substrate misorientation stabilizes the initial ordering effect along [001] and does not change the direction of anisotropy. ©1995 American Institute of Physics.
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