作者: Jun Shen,
期刊: Journal of Applied Physics (AIP Available online 1995) 卷期: Volume 78, issue 10
页码: 6220-6223
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360568
出版商: AIP
数据来源: AIP
摘要:
Several possible contributions to the valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes are analyzed. A theoretical model proposes that the field‐assisted thermionic hole emission is the main valley leakage mechanism at high temperature and the Fowler–Nordheim hole tunneling is the dominant leakage path at low temperature and high bias. ©1995 American Institute of Physics.
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