A technique for enhancing the conductivity of polysilicon interconnects by self‐aligned layers of platinum has been developed. A sheet resistance of approximately 1 Ω/⧠ was achieved for an interconnect height of 270 nm. Very thin layers of platinum have also been used to provide self‐alignment of other metals such as nickel, titanium, and aluminum. Nickel and titanium required prolonged ultrasonic processing to achieve self‐alignment to the polysilicon, as their specific stiffness coefficients were less favorable than that of platinum. Aluminum self‐alignment was only achieved after overlaying with films of nickel and platinum, and subsequently removing the latter layers by dissolving the nickel in fuming nitric acid. Polysilicon interconnects enhanced with a layer of self‐aligned aluminum yielded a sheet resistance of 1.2 Ω/⧠ for a total interconnect height of 120 nm. Metal‐oxide semiconductor (MOS) transistors and ring oscillators manufactured with metal enhanced interconnects showed no degradation effects when compared to those manufactured by the standard MOS process. Therefore, the process offers the advantages of self‐aligned source and drain regions and high yields associated with polysilicon gate technology together with those of a highly conducting metal gate.