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Si by XPS

 

作者: Kazuhiro Nakajima,   Sean P. McGinnis,   Michael A. Kelly,  

 

期刊: Surface Science Spectra  （AIP Available online 1993）
卷期: Volume 2, issue 1  

页码: 61-66

 

ISSN:1055-5269

 

年代: 1993

 

DOI:10.1116/1.1247726

 

出版商: American Vacuum Society

 

关键词: SILICON;PHOTOELECTRON SPECTROSCOPY;X RADIATION;ETCHING;VALENCE BANDS;MONOCRYSTALS;WAFERS;PHOTOEMISSION

 

数据来源: AIP

 

摘要:

X-ray photoemission spectra from Si which has been chemically etched in HF (hydrofluoric acid) are presented. The data include measurements of the valence band region, Si 2pregion, Si 2sregion, and O 1sregion. These data are useful for comparison to the oxidized Si.

 

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