Ellipsometry study on refractive index profiles of the SiO2/Si3N4/SiO2/Si structure
作者:
Tien Sheng Chao,
Chung Len Lee,
Tan Fu Lei,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 4
页码: 1732-1736
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353208
出版商: AIP
数据来源: AIP
摘要:
In this work, the refractive index profiles of SiO2/Si3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O2ambient at the temperature range of 900–1050 °C for different lengths of time. It was found that for a nitride film thickness less than 250 A˚, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2oxidation of nitride at the above temperature range was linear for an oxidation time of 30–120 min. The activation energy was 2.24 eV.
点击下载:
PDF
(507KB)
返 回