首页   按字顺浏览 期刊浏览 卷期浏览 Epitaxial BaTiO3films on silicon for MFSFET applications
Epitaxial BaTiO3films on silicon for MFSFET applications

 

作者: Jerry Hallmark,   Zhiyi Yu,   Ravi Droopad,   Jamal Ramdani,   Jay Curless,   Corey Overgaard,   Jeff Finder,   Dan Marshall,   Jun Wang,   Bill Ooms,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 41-50

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228454

 

出版商: Taylor & Francis Group

 

关键词: BaTiO3;epitaxial;MBE;ferroelectric FET

 

数据来源: Taylor

 

摘要:

Recently, we have grown epitaxial BaTiO3films directly on a Si (001) substrate using molecular beam epitaxy (MBE). The films have been characterized both physically (RHEED, XRD, AFM, SE) and electrically (CV & IV). The films show streaky RHEED patterns and sharp X-ray diffraction patterns, indicating epitaxial BTO growth. The leakage current is below 1E-8 A/cm2 at 2V. The CV results show good interface properties. The films exhibit a 0.5V hysteresis in the CV curves.

 

点击下载:  PDF (521KB)



返 回