Forces driving semiconductor nonvolatile memories
作者:
Roman Fedorak,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 4,
issue 2
页码: 187-189
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408018673
出版商: Taylor & Francis Group
关键词: memory;nonvolatile;memory requirements
数据来源: Taylor
摘要:
This paper reviews the rationale and the development environment for the nonvolatile memory technology(ies).
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