Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system
作者:
Ping Liu,
Bing‐Zong Li,
Zhen Sun,
Zhi‐Guang Gu,
Wei‐Ning Huang,
Zu‐Yao Zhou,
Ru‐Shan Ni,
Cheng‐Lu Lin,
Shi‐Chang Zou,
Feng Hong,
G. A. Rozgonyi,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 3
页码: 1700-1706
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354824
出版商: AIP
数据来源: AIP
摘要:
Formation of CoSi2films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single‐crystalline CoSi2films on both Si(111) and Si(100) substrates through a multistep annealing process with temperatures from 550 to 900 °C in a nitrogen environment. A thin layer of TiN was formed on top of the epitaxial CoSi2. The values of Rutherford backscattering spectrometry/channeling minimum yield &khgr;minfor the epitaxial CoSi2films were in the range of 10%–14%. The epitaxial CoSi2grown on Si(111) was found to be composed of typeB.
点击下载:
PDF
(808KB)
返 回