Various phase transitions and changes in surface morphology of crystalline silicon induced by 4–260‐ps pulses of 1‐&mgr;m radiation
作者:
Ian W. Boyd,
Steven C. Moss,
Thomas F. Boggess,
Arthur L. Smirl,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 80-82
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94977
出版商: AIP
数据来源: AIP
摘要:
We report the first pulse width study of the various morphological changes and bulk phase transitions of single crystal silicon irradiated by 1‐&mgr;m pulses of 4–260‐ps duration. In particular, we find that amorphous silicon is formed from the melt contrary to published expectations, but only for pulse widths less than 10 ps. We also find that the single shot melting threshold is pulse width dependent. Additionally, we observe the growth of multishot damage and of periodic ripple patterns with pulses as short as 4 ps.
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