SiC films were grown on (100) silicon substrates using a Si molecular beam and a C+ion beam with the same impingement rates of Si atoms and C+ions. Reflection high‐energy electron diffraction analysis showed that 3C‐SiC grows epitaxially on the Si substrate at temperatures ranging from 820 to 1000 °C and at the ion energies of 50 and 100 eV with the ion current density of about 3 &mgr;A/cm2. Auger electron spectroscopy measurements showed that the films obtained were stoichiometric and do not contain impurities such as oxygen. The influence of surface treatments of Si substrates was also studied.