Gold‐n‐type GaAs Schottky contacts have been fabricated on a single‐crystal part of polycrystalline GaAs with grain size of about 1 cm. The current‐voltage (I‐V) characteristic has been measured over the temperature range 120–380 K. The barrier height is evaluated from the Richardson plot as 0.57 eV, and discussed by taking account of the effects of an interfacial layer between the metal and semiconductor. The capacitance‐voltage (C‐V) characteristic has been measured at 0.1, 1, and 100 kHz over the temperature range 120–500 K. A frequency dispersion is observed in theC‐Vcharacteristic. It is explained by the frequency dispersion in the dielectric constant of the interfacial layer and the capacitive response of trapping states in the interfacial layer and single‐crystal parts of polycrystalline GaAs.