Application of bipolar transistor structures to optical waveguide modulators and switches
作者:
Yoshitaka Okada,
Kunio Tada,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 1
页码: 73-78
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.347659
出版商: AIP
数据来源: AIP
摘要:
Basic experimental results obtained with a GaAs/AlGaAs double‐heterojunction bipolar transistor (DHBT) waveguide structure carrier‐injected optical intensity modulator/switch are fully described. Typical common‐emitter dc current gain obtained with a 0.25‐&mgr;m‐thick base/waveguide was ∼40, and the switching times have been determined as 1.5 ns. Optical on/off modulation ratios of up to 2.1:1 have been demonstrated at an input base current of as small as 3 mA for a device with emitter/waveguide width of 7 &mgr;m and length of 190 &mgr;m. Design and analysis of the optical switching characteristics expected for a reflection‐type X‐crossing optical switch of DHBT waveguide structure are also presented on the basis of these experimental results.
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