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Luminescence of GaP at high excitation

 

作者: R. Tsu,  

 

期刊: Journal of Applied Physics  (AIP Available online 1973)
卷期: Volume 44, issue 7  

页码: 3176-3179

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662727

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Apart from the usual bound‐exciton luminescence due to Te and N centers, broader peaks which appear at high excitation may be explained by free‐carrier screening of the free excitons, or by high‐density excitonic effects. A weak‐luminescence structure observed around 2.8 eV, which has not been reported before, may be due to conduction electrons at theLpoint with holes at &Ggr;15bound to the neutral donors.

 

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