Secondary ion mass spectrometry correlated with ionic implantations has allowed us to determine oxygen bulk concentration in scandium diphthalocyanine thin films. This concentration, around 2×1020atom cm−3, increases by a factor 20–25 in implanted areas. This oxygen enhancement is observed for oxygen implantation but as well for xenon, caesium, or iodine implantation, and therefore is not dependent on the nature of the implanted atoms. The oxygen concentration saturates in the damaged region but its quantity depends on the energy loss and on the fluence;thelarger the damaged layer,thelarger the region where the enhancment takes place. The phenomenon will be tentatively related to the creation of free radicals induced by bond breaking occurring during the implantation process.But, other explanationsincludingmore severe degradations of the molecular material cannot be dismissed.