The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures
作者:
A. Saher Helmy,
J. S. Aitchison,
J. H. Marsh,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 20
页码: 2998-3000
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120242
出版商: AIP
数据来源: AIP
摘要:
An atomic-scale model for the kinetics of intermixing of GaAs/AlGaAs, quantum confined heterostructures is presented. It quantifies the effects of the statistical nature of defect diffusion through heterostructures on the Ga/Al interdiffusion across such an interface. The model has been validated by successfully predicting the observed amounts of quantum well intermixing induced by a hydrogen plasma induced defect layer intermixing process. Agreement within 30&percent; of the measurements was obtained for values of the surface releasevelocity>1 &mgr;m s1.©1997 American Institute of Physics.
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