We present results on room‐temperature photopumped lasing action in the blue region (∼4650 A˚) of the spectrum for double heterostructures with ZnSe active layers. The confining layers are ZnS0.06Se0.94, providing lattice match to the GaAs substrate. The room‐temperature lasing, observed under pulsed excitation, yields threshold pump intensity as low as 58 kW cm−2for an active layer thickness of 1500 A˚.