首页   按字顺浏览 期刊浏览 卷期浏览 Fabrication of 20‐nm structures in GaAs
Fabrication of 20‐nm structures in GaAs

 

作者: M. B. Stern,   H. G. Craighead,   P. F. Liao,   P. M. Mankiewich,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 4  

页码: 410-412

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95239

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Structures as small as 20 nm have been fabricated in GaAs by high‐resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single‐layer electron beam resist. This metal mask pattern was transferred into the III‐V material by etching in a SiCl4plasma

 

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