Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAs
作者:
A. Goltzene,
B. Meyer,
C. Schwab,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3117-3120
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332466
出版商: AIP
数据来源: AIP
摘要:
The generation rate of paramagnetic defects has been measured by means of Electron Paramagnetic Resonance over the 1015–1017‐10n cm−2fluence range, using a low flux (7×101010n cm−2 s−1) of fast neutrons; much higher yields are achievable than reported up to now. A comparison of 4.2‐ and 295‐K spectra evidences a narrowing of the hyperfine structure separation of the components of the AsGaquadruplet with increasing temperature.
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