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Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAs

 

作者: A. Goltzene,   B. Meyer,   C. Schwab,  

 

期刊: Journal of Applied Physics  (AIP Available online 1983)
卷期: Volume 54, issue 6  

页码: 3117-3120

 

ISSN:0021-8979

 

年代: 1983

 

DOI:10.1063/1.332466

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The generation rate of paramagnetic defects has been measured by means of Electron Paramagnetic Resonance over the 1015–1017‐10n  cm−2fluence range, using a low flux (7×101010n  cm−2 s−1) of fast neutrons; much higher yields are achievable than reported up to now. A comparison of 4.2‐  and 295‐K spectra evidences a narrowing of the hyperfine structure separation of the components of the AsGaquadruplet with increasing temperature.

 

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