Stacking faults in WSi2: Resistivity effects
作者:
F. M. d’Heurle,
F. K. LeGoues,
R. Joshi,
Ilka Suni,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 5
页码: 332-334
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96542
出版商: AIP
数据来源: AIP
摘要:
Films of WSi2initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2films has been identified.
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